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 RB521S30_1 ? NXP B.V. 2009. All rights reserved. Product data sheet Rev. 01 — 6 October 2009 6 of 12 NXP Semiconductors RB521S30 200 mA low VF MEGA Schottky barrier recti?er f = 1 MHz; Tamb =25°CTj = 150 °C (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ =1 Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Average forward power dissipation as a function of average forward current; typical values Tj= 125°C (1)δ =1 (2) δ = 0.9 (3) δ = 0.8 (4) δ = 0.5 FR4 PCB, standard footprint Tj = 150 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig 7. Average reverse power dissipation as a function of reverse voltage; typical values Fig 8. Average forward current as a function of ambient temperature; typical values VR (V) 03010 20 0.0 0.30.1 0.2 006aab714 35 Cd (pF) 0 5 10 15 20 25 30 IF(AV) (A) 006aab715 0.05 0.10 0.15 PF(AV) (W) 0.0 (1) (2) (3) (4) VR (V) 0255 10 15 20 0 50 100 150 17525 75 125 006aab716 0.175 PR(AV) (W) 0.15 0.125 0.075 0.025 0.0 0.05 0.10 (1) (2) (3) (4) Tamb ( °C) 006aab717 0.1 0.2 0.3 IF(AV) (A) 0.0 (1) (2) (3) (4) |